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See Product Specifications
| Part Number: | 2SB817C-1E |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | onsemi |
| Packaging: | Tube |
| Product Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 12 A |
| Voltage - Collector Emitter Breakdown (Max): | 140 V |
| Vce Saturation (Max) @ Ib, Ic: | 2V @ 500mA, 5A |
| Current - Collector Cutoff (Max): | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 5V |
| Power - Max: | 120 W |
| Frequency - Transition: | 10MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P-3L |
