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| Part Number: | PMCM650VNEZ |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 12 V |
| Current - Continuous Drain (Id) @ 25°C: | 6.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
| Rds On (Max) @ Id, Vgs: | 25mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id: | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15.4 nC @ 4.5 V |
| Vgs (Max): | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1060 pF @ 6 V |
| FET Feature: | - |
| Power Dissipation (Max): | 556mW (Ta), 12.5W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-WLCSP (1.48x0.98) |
| Package / Case: | 6-XFBGA, WLCSP |
