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See Product Specifications
| Part Number: | PHE13009/DG,127 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 12 A |
| Voltage - Collector Emitter Breakdown (Max): | 400 V |
| Vce Saturation (Max) @ Ib, Ic: | 2V @ 1.6A, 8A |
| Current - Collector Cutoff (Max): | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 5A, 5V |
| Power - Max: | 80 W |
| Frequency - Transition: | - |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
