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See Product Specifications
| Part Number: | PDTD123YQAZ |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer: | NXP Semiconductors |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | - |
| Current - Collector (Ic) (Max): | - |
| Voltage - Collector Emitter Breakdown (Max): | - |
| Resistor - Base (R1): | - |
| Resistor - Emitter Base (R2): | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | - |
| Vce Saturation (Max) @ Ib, Ic: | - |
| Current - Collector Cutoff (Max): | - |
| Frequency - Transition: | - |
| Power - Max: | - |
| Mounting Type: | - |
| Package / Case: | - |
| Supplier Device Package: | - |
