Images are for reference only
See Product Specifications
| Part Number: | PDTB123ES,126 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Tape & Box (TB) |
| Product Status: | Obsolete |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 500 mA |
| Voltage - Collector Emitter Breakdown (Max): | 50 V |
| Resistor - Base (R1): | 2.2 kOhms |
| Resistor - Emitter Base (R2): | 2.2 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | - |
| Power - Max: | 500 mW |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package: | TO-92-3 |
