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See Product Specifications
| Part Number: | PDTA113EMB,315 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100 mA |
| Voltage - Collector Emitter Breakdown (Max): | 50 V |
| Resistor - Base (R1): | 1 kOhms |
| Resistor - Emitter Base (R2): | 1 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 40mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 1.5mA, 30mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 180 MHz |
| Power - Max: | 250 mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | DFN1006B-3 |
