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See Product Specifications
| Part Number: | PBSS5612PA,115 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | NXP Semiconductors |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 6 A |
| Voltage - Collector Emitter Breakdown (Max): | 12 V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 300mA, 6A |
| Current - Collector Cutoff (Max): | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 190 @ 2A, 2V |
| Power - Max: | 2.1 W |
| Frequency - Transition: | 60MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 3-PowerUDFN |
| Supplier Device Package: | 3-HUSON (2x2) |
