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| Part Number: | BUK9E6R1-100E,127 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Tube |
| Product Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Rds On (Max) @ Id, Vgs: | 5.9mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 133 nC @ 5 V |
| Vgs (Max): | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 17460 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 349W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I2PAK |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
