Images are for reference only
See Product Specifications
| Part Number: | BUK6E2R0-30C127 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Bulk |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 2.2mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 229 nC @ 10 V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 14964 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 306W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I2PAK |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
