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See Product Specifications
| Part Number: | BLF6G10LS-160RN112 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | - |
| Frequency - Transition: | - |
| Noise Figure (dB Typ @ f): | - |
| Gain: | - |
| Power - Max: | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | - |
| Current - Collector (Ic) (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | - |
| Package / Case: | - |
| Supplier Device Package: | - |
