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See Product Specifications
| Part Number: | BFU660F,115 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 5.5V |
| Frequency - Transition: | 21GHz |
| Noise Figure (dB Typ @ f): | 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz |
| Gain: | 12dB ~ 21dB |
| Power - Max: | 225mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 10mA, 2V |
| Current - Collector (Ic) (Max): | 60mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-343F |
| Supplier Device Package: | 4-DFP |
