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See Product Specifications
| Part Number: | BF240,112 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Frequency - Transition: | 150MHz |
| Noise Figure (dB Typ @ f): | - |
| Gain: | - |
| Power - Max: | 300mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 67 @ 1mA, 10V |
| Current - Collector (Ic) (Max): | 25mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package: | TO-92-3 |