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See Product Specifications
| Part Number: | BC635,112 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1 A |
| Voltage - Collector Emitter Breakdown (Max): | 45 V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 63 @ 150mA, 2V |
| Power - Max: | 830 mW |
| Frequency - Transition: | 180MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package: | TO-92-3 |
