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| Part Number: | A2G35S200-01SR3 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - RF |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| Transistor Type: | GaN HEMT |
| Frequency: | 3.4GHz ~ 3.6GHz |
| Gain: | 16.1dB |
| Voltage - Test: | 48 V |
| Current Rating (Amps): | - |
| Noise Figure: | - |
| Current - Test: | 291 mA |
| Power - Output: | 180W |
| Voltage - Rated: | 125 V |
| Package / Case: | NI-400S-2S |
| Supplier Device Package: | NI-400S-2S |
