Images are for reference only
See Product Specifications
| Part Number: | 2PB709ASW,115 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100 mA |
| Voltage - Collector Emitter Breakdown (Max): | 45 V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max): | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 290 @ 2mA, 10V |
| Power - Max: | 200 mW |
| Frequency - Transition: | 80MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SOT-323 |
