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| Part Number: | 2N7000,126 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Tape & Box (TB) |
| Product Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 300mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 40 pF @ 10 V |
| FET Feature: | - |
| Power Dissipation (Max): | 830mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-92-3 |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
