Images are for reference only
See Product Specifications
| Part Number: | 2N5551,412 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | NXP USA Inc. |
| Packaging: | Tube |
| Product Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 300 mA |
| Voltage - Collector Emitter Breakdown (Max): | 160 V |
| Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max): | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Power - Max: | 630 mW |
| Frequency - Transition: | 300MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package: | TO-92-3 |
