NTE5926

NTE5926

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NTE5926
Description:
R-1200V 60A DO5 KK
Package:
Bag
Datasheet:
NTE5926 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:NTE5926
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:NTE Electronics, Inc
Packaging:Bag
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):60A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 60 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:10 mA @ 1200 V
Capacitance @ Vr, F:-
Mounting Type:Stud Mount
Package / Case:DO-203AA, DO-5, Stud
Supplier Device Package:DO-5
Operating Temperature - Junction:-65°C ~ 175°C
In Stock: 16
Stock:
16 Can Ship Immediately
  • Share:
For Use With
US1NWF-7
US1NWF-7
Diodes Incorporated
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SSC54-E3/57T
SSC54-E3/57T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 5A DO214AB
BYV25FX-600,127
BYV25FX-600,127
NXP USA Inc.
NOW WEEN - BYV25FX-600 - ULTRAFA
S2J-LTP
S2J-LTP
Micro Commercial Co
DIODE GEN PURP 600V 2A DO214AA
PMEG3020BER-QX
PMEG3020BER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
UPS190E3/TR13
UPS190E3/TR13
Microchip Technology
DIODE SCHOTTKY 1A 90V POWERMITE
SD091SB150A.T1
SD091SB150A.T1
SMC Diode Solutions
PIV 150V IO 7.5A CHIP SIZE 90MIL
1N5811US/TR
1N5811US/TR
Microchip Technology
UFR,FRR
R6201840XXOO
R6201840XXOO
Powerex Inc.
DIODE GP 1.8KV 400A DO200AA R62
JANTX1N4938-1
JANTX1N4938-1
Microchip Technology
DIODE GEN PURP 175V 100MA DO35
VS-MBRB1035TRLPBF
VS-MBRB1035TRLPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 10A D2PAK
GP10G-4004-M3/54
GP10G-4004-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
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