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See Product Specifications
| Part Number: | NTE2322 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | NTE Electronics, Inc |
| Packaging: | Bag |
| Product Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 600 mA |
| Voltage - Collector Emitter Breakdown (Max): | 40 V |
| Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 30mA, 300mA |
| Current - Collector Cutoff (Max): | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
| Power - Max: | 650 mW |
| Frequency - Transition: | 200MHz |
| Operating Temperature: | -55°C ~ 125°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | 14-DIP (0.300", 7.62mm) |
| Supplier Device Package: | 14-DIP |
