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See Product Specifications
| Part Number: | NTE227 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | NTE Electronics, Inc |
| Packaging: | Bag |
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 100 mA |
| Voltage - Collector Emitter Breakdown (Max): | 300 V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 2mA, 20mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 10V |
| Power - Max: | 850 mW |
| Frequency - Transition: | 200MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-237AA |
| Supplier Device Package: | TO-237 |
