Images are for reference only
See Product Specifications
| Part Number: | NTE123 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | NTE Electronics, Inc |
| Packaging: | Bag |
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 800 mA |
| Voltage - Collector Emitter Breakdown (Max): | 40 V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
| Power - Max: | 800 mW |
| Frequency - Transition: | 300MHz |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package: | TO-39 |
