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See Product Specifications
| Part Number: | NTE108-1 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | NTE Electronics, Inc |
| Packaging: | Bag |
| Product Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 15V |
| Frequency - Transition: | 600MHz |
| Noise Figure (dB Typ @ f): | 6dB @ 60MHz |
| Gain: | 15dB |
| Power - Max: | 625mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 8mA, 10V |
| Current - Collector (Ic) (Max): | 50mA |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-106-3 Domed |
| Supplier Device Package: | TO-106 |
