Images are for reference only
See Product Specifications
| Part Number: | BDV65 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | NTE Electronics, Inc |
| Packaging: | Bag |
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 12 A |
| Voltage - Collector Emitter Breakdown (Max): | 60 V |
| Vce Saturation (Max) @ Ib, Ic: | - |
| Current - Collector Cutoff (Max): | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 5A, 4V |
| Power - Max: | 125 W |
| Frequency - Transition: | 60MHz |
| Operating Temperature: | - |
| Mounting Type: | Through Hole |
| Package / Case: | TO-218-3 |
| Supplier Device Package: | TO-218 |
