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See Product Specifications
| Part Number: | 2N6666 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | NTE Electronics, Inc |
| Packaging: | Bag |
| Product Status: | Active |
| Transistor Type: | PNP - Darlington |
| Current - Collector (Ic) (Max): | 8 A |
| Voltage - Collector Emitter Breakdown (Max): | 40 V |
| Vce Saturation (Max) @ Ib, Ic: | 3V @ 80mA, 8A |
| Current - Collector Cutoff (Max): | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 3A, 3V |
| Power - Max: | 65 W |
| Frequency - Transition: | - |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
