Images are for reference only
See Product Specifications
| Part Number: | 2N3585 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | NTE Electronics, Inc |
| Packaging: | Bag |
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 2 A |
| Voltage - Collector Emitter Breakdown (Max): | 300 V |
| Vce Saturation (Max) @ Ib, Ic: | 750mV @ 125mA, 1A |
| Current - Collector Cutoff (Max): | 5mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 1A, 10V |
| Power - Max: | 35 W |
| Frequency - Transition: | - |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-213AA, TO-66-2 |
| Supplier Device Package: | TO-66 |
