NXV55UNR

NXV55UNR

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NXV55UNR
Description:
NXV55UN/SOT23/TO-236AB
Package:
Tape & Reel (TR)
Datasheet:
NXV55UNR Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:NXV55UNR
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Nexperia USA Inc.
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:66mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:352 pF @ 15 V
FET Feature:-
Power Dissipation (Max):340mW (Ta), 2.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 0
Stock:
0 Can Ship Immediately
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