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See Product Specifications
| Part Number: | MS1006 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | Microsemi Corporation |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 55V |
| Frequency - Transition: | 30MHz |
| Noise Figure (dB Typ @ f): | - |
| Gain: | 14dB |
| Power - Max: | 127W |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 19 @ 1.4A, 6V |
| Current - Collector (Ic) (Max): | 3.25A |
| Operating Temperature: | 200°C |
| Mounting Type: | Stud Mount |
| Package / Case: | M135 |
| Supplier Device Package: | M135 |
