Images are for reference only
See Product Specifications
| Part Number: | MDS1100 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | Microsemi Corporation |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 65V |
| Frequency - Transition: | 1.03GHz |
| Noise Figure (dB Typ @ f): | - |
| Gain: | 8.9dB |
| Power - Max: | 8750W |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5A, 5V |
| Current - Collector (Ic) (Max): | 100A |
| Operating Temperature: | 200°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 55TU-1 |
| Supplier Device Package: | 55TU-1 |