2N6798U

2N6798U

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2N6798U
Description:
MOSFET N-CH 200V 5.5A 18ULCC
Package:
Bulk
Datasheet:
2N6798U Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:2N6798U
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Microsemi Corporation
Packaging:Bulk
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):800mW (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:18-ULCC (9.14x7.49)
Package / Case:18-CLCC
In Stock: 0
Stock:
0 Can Ship Immediately
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