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See Product Specifications
| Part Number: | 2N5012S |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | Microsemi Corporation |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 200 mA |
| Voltage - Collector Emitter Breakdown (Max): | 700 V |
| Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 5mA, 25mA |
| Current - Collector Cutoff (Max): | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 25mA, 10V |
| Power - Max: | 1 W |
| Frequency - Transition: | - |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package: | TO-39 (TO-205AD) |
