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See Product Specifications
| Part Number: | 2N3960 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | Microsemi Corporation |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | - |
| Voltage - Collector Emitter Breakdown (Max): | 12 V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 3mA, 30mA |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 1V |
| Power - Max: | 400 mW |
| Frequency - Transition: | - |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package: | TO-18 (TO-206AA) |
