Images are for reference only
See Product Specifications
| Part Number: | 2N1016B |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | Microsemi Corporation |
| Packaging: | Bulk |
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 7.5 A |
| Voltage - Collector Emitter Breakdown (Max): | 100 V |
| Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 1A, 5A |
| Current - Collector Cutoff (Max): | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 2A, 4V |
| Power - Max: | 150 W |
| Frequency - Transition: | - |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | - |
| Package / Case: | - |
| Supplier Device Package: | TO-82 |
