Images are for reference only
See Product Specifications
| Part Number: | 2A8 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | Microsemi Corporation |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 21V |
| Frequency - Transition: | 2GHz |
| Noise Figure (dB Typ @ f): | - |
| Gain: | 7dB ~ 9dB |
| Power - Max: | 5.3W |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 100mA, 5V |
| Current - Collector (Ic) (Max): | 300mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | 55EU |
| Supplier Device Package: | 55EU |
