VP2110K1-G

VP2110K1-G

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VP2110K1-G
Description:
MOSFET P-CH 100V 120MA TO236AB
Package:
Tape & Reel (TR)
Datasheet:
VP2110K1-G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:VP2110K1-G
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Microchip Technology
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:12Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:-
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB (SOT23)
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 0
Stock:
0 Can Ship Immediately
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