VP0808L-G

VP0808L-G

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VP0808L-G
Description:
MOSFET P-CH 80V 280MA TO92-3
Package:
Bag
Datasheet:
VP0808L-G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:VP0808L-G
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Microchip Technology
Packaging:Bag
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:280mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
In Stock: 0
Stock:
0 Can Ship Immediately
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