MSR2N3810L

MSR2N3810L

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MSR2N3810L
Description:
DUAL SMALL-SIGNAL BJT
Package:
Bulk
Datasheet:
MSR2N3810L Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:MSR2N3810L
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Arrays
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):50mA
Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:250mV @ 100µA, 1mA
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 1mA, 5V
Power - Max:350mW
Frequency - Transition:-
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-78-6 Metal Can
Supplier Device Package:TO-78-6
In Stock: 0
Stock:
0 Can Ship Immediately
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