MSCSM170HM12CAG

MSCSM170HM12CAG

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MSCSM170HM12CAG
Description:
PM-MOSFET-SIC-SBD-SP6C
Package:
Bulk
Datasheet:
MSCSM170HM12CAG Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:MSCSM170HM12CAG
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
FET Type:4 N-Channel (Full Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C:179A (Tc)
Rds On (Max) @ Id, Vgs:15mOhm @ 90A, 20V
Vgs(th) (Max) @ Id:3.2V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs:534nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:9900pF @ 1000V
Power - Max:843W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:-
In Stock: 0
Stock:
0 Can Ship Immediately
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