MSCSM170HM087CAG

MSCSM170HM087CAG

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MSCSM170HM087CAG
Description:
PM-MOSFET-SIC-SBD-SP6C
Package:
Bulk
Datasheet:
MSCSM170HM087CAG Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:MSCSM170HM087CAG
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
FET Type:4 N-Channel (Full Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C:238A (Tc)
Rds On (Max) @ Id, Vgs:11.3mOhm @ 120A, 20V
Vgs(th) (Max) @ Id:3.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:712nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:13200pF @ 1000V
Power - Max:1.114kW (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:-
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