MSCSM120DUM31CTBL1NG

MSCSM120DUM31CTBL1NG

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MSCSM120DUM31CTBL1NG
Description:
PM-MOSFET-SIC-SBD-BL1
Package:
Bulk
Datasheet:
MSCSM120DUM31CTBL1NG Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:MSCSM120DUM31CTBL1NG
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
FET Type:2 N-Channel (Dual) Common Source
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V
Current - Continuous Drain (Id) @ 25°C:79A
Rds On (Max) @ Id, Vgs:31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:3020pF @ 1000V
Power - Max:310W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:-
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