MSCSM120AM042CD3AG

MSCSM120AM042CD3AG

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MSCSM120AM042CD3AG
Description:
PM-MOSFET-SIC-SBD~-D3
Package:
Box
Datasheet:
MSCSM120AM042CD3AG Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:MSCSM120AM042CD3AG
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Microchip Technology
Packaging:Box
Product Status:Active
FET Type:2 N Channel (Phase Leg)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:495A (Tc)
Rds On (Max) @ Id, Vgs:5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id:2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs:1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:18.1pF @ 1000V
Power - Max:2.031kW (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:D3
In Stock: 11
Stock:
11 Can Ship Immediately
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