JANTXV2N3637P

JANTXV2N3637P

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JANTXV2N3637P
Description:
SMALL-SIGNAL BJT
Package:
Bulk
Datasheet:
JANTXV2N3637P Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:JANTXV2N3637P
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):175 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 50mA
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 10V
Power - Max:1 W
Frequency - Transition:-
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39 (TO-205AD)
In Stock: 0
Stock:
0 Can Ship Immediately
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