JANTXV1N5811US

JANTXV1N5811US

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JANTXV1N5811US
Description:
DIODE GEN PURP 150V 3A B-MELF
Package:
Bulk
Datasheet:
JANTXV1N5811US Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:JANTXV1N5811US
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:5 µA @ 150 V
Capacitance @ Vr, F:60pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:B, SQ-MELF
Operating Temperature - Junction:-65°C ~ 175°C
In Stock: 0
Stock:
0 Can Ship Immediately
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