JANTXV1N5552US

JANTXV1N5552US

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JANTXV1N5552US
Description:
DIODE GEN PURP 600V 3A B-MELF
Package:
Bulk
Datasheet:
JANTXV1N5552US Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:JANTXV1N5552US
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 9 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:1 µA @ 600 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:D-5B
Operating Temperature - Junction:-65°C ~ 175°C
In Stock: 0
Stock:
0 Can Ship Immediately
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