JANSL2N3636UB/TR

JANSL2N3636UB/TR

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JANSL2N3636UB/TR
Description:
NPN TRANSISTOR
Package:
Bulk
Datasheet:
JANSL2N3636UB/TR Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:JANSL2N3636UB/TR
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):10 µA
Voltage - Collector Emitter Breakdown (Max):175 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 50mA
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 50mA, 10V
Power - Max:1.5 W
Frequency - Transition:-
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Surface Mount
Package / Case:4-SMD, No Lead
Supplier Device Package:UB
In Stock: 0
Stock:
0 Can Ship Immediately
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