JANSD2N3439L

JANSD2N3439L

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JANSD2N3439L
Description:
RH POWER BJT
Package:
Bulk
Datasheet:
JANSD2N3439L Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:JANSD2N3439L
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 4mA, 50mA
Current - Collector Cutoff (Max):2µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 20mA, 10V
Power - Max:800 mW
Frequency - Transition:-
Operating Temperature:-55°C ~ 200°C
Mounting Type:Through Hole
Package / Case:TO-205AA, TO-5-3 Metal Can
Supplier Device Package:TO-5
In Stock: 0
Stock:
0 Can Ship Immediately
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