JAN2N5796

JAN2N5796

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JAN2N5796
Description:
NPN TRANSISTOR
Package:
Bulk
Datasheet:
JAN2N5796 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:JAN2N5796
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Arrays
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):600mA
Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:600mW
Frequency - Transition:-
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-78-6 Metal Can
Supplier Device Package:TO-78-6
In Stock: 0
Stock:
0 Can Ship Immediately
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