JAN2N3867P

JAN2N3867P

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JAN2N3867P
Description:
POWER BJT
Package:
Bulk
Datasheet:
JAN2N3867P Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:JAN2N3867P
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 500mA, 1V
Power - Max:1 W
Frequency - Transition:-
Operating Temperature:-55°C ~ 200°C
Mounting Type:Through Hole
Package / Case:TO-205AA, TO-5-3 Metal Can
Supplier Device Package:TO-5AA
In Stock: 0
Stock:
0 Can Ship Immediately
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