JAN2N3439P

JAN2N3439P

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See Product Specifications

JAN2N3439P
Description:
POWER BJT
Package:
Bulk
Datasheet:
JAN2N3439P Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:JAN2N3439P
Category:Discrete Semiconductor Products
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 4mA, 50mA
Current - Collector Cutoff (Max):2µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 20mA, 10V
Power - Max:800 mW
Frequency - Transition:-
Operating Temperature:-55°C ~ 200°C
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39 (TO-205AD)
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
2SC2331-AZ
2SC2331-AZ
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onsemi
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2SA1037AKT146S
Rohm Semiconductor
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