JAN1N5615US

JAN1N5615US

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JAN1N5615US
Description:
DIODE GEN PURP 200V 1A D-5A
Package:
Bulk
Datasheet:
JAN1N5615US Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:JAN1N5615US
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:800 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:500 µA @ 200 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 200°C
In Stock: 0
Stock:
0 Can Ship Immediately
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