APT9M100B

APT9M100B

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APT9M100B
Description:
MOSFET N-CH 1000V 9A TO247
Package:
Tube
Datasheet:
APT9M100B Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:APT9M100B
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Microchip Technology
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2605 pF @ 25 V
FET Feature:-
Power Dissipation (Max):335W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 [B]
Package / Case:TO-247-3
In Stock: 0
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